原子層デバイス (Atomic layer devices)

磁性、超伝導など様々な特性をもつ劈開性物質を、原子レベルまで薄くしたデバイスに加工し、原子層デバイス特有の物性を観測します。

参考文献

• Negative resistance state in superconducting NbSe₂ induced by surface acoustic waves
  M. Yokoi, S. Fujiwara, T. Kawamura, T. Arakawa, K. Aoyama, H. Fukuyama, K. Kobayashi, and Y. Niimi*,
  Science Advances 6, eaba1377 (2020).
• Quantum oscillations with magnetic hysteresis observed in CeTe₃ thin films
  M. Watanabe, S.-H. Lee, T. Asano, T. Ibe, M. Tokuda, H. Taniguchi, D. Ueta, Y. Okada, K. Kobayashi, and Y. Niimi*,
  Applied Physics Letters 117, 072403 (2020).
• Enhancement of coercive field in atomically-thin quenched Fe₅GeTe₂
  T. Ohta, K. Sakai, H. Taniguchi, B. Driesen, Y. Okada, K. Kobayashi, and Y. Niimi*,
  Applied Physics Express 13, 043005 (2020).
• Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag₂CrO₂
  H. Taniguchi, M. Watanabe, M. Tokuda, S. Suzuki, E. Imada, T. Ibe, T. Arakawa, H. Yoshida, H. Ishizuka, K. Kobayashi, and Y. Niimi*,
  Scientific Reports 10, 2525 (2020).
• Electrical contacts to thin layers of Bi₂Sr₂CaCu₂O_8+δ
  S. Suzuki, H. Taniguchi, T. Kawakami, M. Cosset-Cheneau, T. Arakawa, S. Miyasaka, S. Tajima, Y. Niimi*, and K. Kobayashi,
  Applied Physics Express 11, 053201 (2018).